Micron patent applications published on 05 January 2006

37 US patent applications published on 05 January 2006 and assigned to Micron

1 20060005107 Error correction in ROM embedded DRAM
2 20060004960 Faster method of erasing flash memory
3 20060003678 System and method for reducing surface defects in integrated circuits
4 20060003675 Fixed-abrasive chemical-mechanical planarization of titanium nitride
5 20060003596 Low temperature process for polysilazane oxidation/densification
6 20060003588 Flash memory cells with reduced distances between cell elements
7 20060003559 apparatus and method for controlling diffusion
8 20060003535 Apparatus and method for controlling diffusion
9 20060003528 Flash memory with metal-insulator-metal tunneling program and erase
10 20060003525 Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
11 20060003517 Atomic layer deposited Zr-Sn-Ti-O films using TiI4
12 20060003516 Flash memory devices on silicon carbide
13 20060003472 Polymer-based ferroelectric memory
14 20060003237 Transparent amorphous carbon structure in semiconductor devices
15 20060002201 Active termination control
16 20060002194 Faster method of erasing flash memory
17 20060002192 Integrated circuit memory device and method
18 20060002190 Reduction of adjacent floating gate data pattern sensitivity
19 20060002188 Write once read only memory employing floating gates
20 20060002187 Programmable fuse and antifuse and method therefor
21 20060002167 Minimizing adjacent wordline disturb in a memory device
22 20060001175 Masking structure having multiple layers including an amorphous carbon layer
23 20060001151 Atomic layer deposited dielectric layers
24 20060001142 Castellation wafer level packaging of integrated circuit chips
25 20060001141 Multi-component integrated circuit contacts
26 20060001131 Memory device power distribution in memory assemblies
27 20060001094 Semiconductor on insulator structure
28 20060001083 Scalable Flash/NV structures and devices with extended endurance
29 20060001082 Floating-gate field-effect transistors having doped aluminum oxide dielectrics
30 20060001080 Write once read only memory employing floating gates
31 20060001079 Electronic systems having doped aluminum oxide dielectrics
32 20060001074 Three dimensional flash cell
33 20060001072 Methods of forming a gated device
34 20060001049 Service programmable logic arrays with low tunnel barrier interpoly insulators
35 20060001022 Methods for making nearly planar dielectric films in integrated circuits
36 20060001019 Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
37 20060000412 Systems and apparatus for atomic-layer deposition