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Micron patent applications published on 18 February 2010
Thursday February 18th 2010, 8:33 am
Filed under: Micron, Patent Applications

18 US patent applications published on 18 February 2010 and assigned to Micron

1 20100042908 DATA AND ERROR CORRECTION CODE MIXING DEVICE AND METHOD
2 20100042889 MEMORY SYSTEM AND METHOD USING A MEMORY DEVICE DIE STACKED WITH A LOGIC DIE USING DATA ENCODING, AND SYSTEM USING THE MEMORY SYSTEM
3 20100042750 CHAINED BUS METHOD AND DEVICE
4 20100041244 HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC
5 20100041180 Methods of Forming Semiconductor Constructions and Assemblies
6 20100040962 MULTI-LAYER, ATTENUATED PHASE-SHIFTING MASK
7 20100039877 EXTERNAL CLOCK TRACKING PIPELINED LATCH SCHEME
8 20100039869 MULTI-STATE MEMORY CELL WITH ASYMMETRIC CHARGE TRAPPING
9 20100039866 SENSING OF MEMORY CELLS IN A SOLID STATE MEMORY DEVICE BY FIXED DISCHARGE OF A BIT LINE
10 20100039864 METHODS OF ERASE VERIFICATION FOR A FLASH MEMORY DEVICE
11 20100039862 READ OPERATION FOR NAND MEMORY
12 20100039860 MEMORY DEVICES AND METHODS OF STORING DATA ON A MEMORY DEVICE
13 20100039147 SEMICONDUCTOR DEVICES WITH SIGNAL SYNCHRONIZATION CIRCUITS
14 20100039097 METHODS AND APPARATUS FOR VOLTAGE SENSING AND REPORTING
15 20100038796 HIGH ASPECT RATIO CONTACTS
16 20100038730 SEMICONDUCTOR STRUCTURES INCLUDING A MOVABLE SWITCHING ELEMENT, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME
17 20100038701 INTEGRATED TWO DEVICE NON-VOLATILE MEMORY
18 20100038614 METHODS OF FORMING A PHASE CHANGE MATERIAL, A PHASE CHANGE MATERIAL, A PHASE CHANGE RANDOM ACCESS MEMORY DEVICE INCLUDING THE PHASE CHANGE MATERIAL, AND A SEMICONDUCTOR STRUCTURE INCLUDING THE PHASE CHANGE MATERIAL