Micron patent applications published on 29 August 2013

16 US patent applications published on 29 August 2013 and assigned to Micron

1 20130227369 ERROR DETECTION OR CORRECTION OF STORED SIGNALS AFTER ONE OR MORE HEAT EVENTS IN ONE OR MORE MEMORY DEVICES
2 20130227247 MEMORY ADDRESS TRANSLATION
3 20130227210 MEMORY, MEMORY CONTROLLERS, AND METHODS FOR DYNAMICALLY SWITCHING A DATA MASKING/DATA BUS INVERSION INPUT
4 20130227206 METADATA STORAGE ASSOCIATED WITH WEAR-LEVEL OPERATION REQUESTS
5 20130227203 DYNAMIC SLC/MLC BLOCKS ALLOCATIONS FOR NON-VOLATILE MEMORY
6 20130224923 STACKED NON-VOLATILE MEMORY WITH SILICON CARBIDE-BASED AMORPHOUS SILICON THIN FILM TRANSISTORS
7 20130224916 HAFNIUM TANTALUM TITANIUM OXIDE FILMS
8 20130223163 SYSTEMS, AND DEVICES, AND METHODS FOR PROGRAMMING A RESISTIVE MEMORY CELL
9 20130223150 APPARATUS AND METHODS FOR APPLYING A NON-ZERO VOLTAGE DIFFERENTIAL ACROSS A MEMORY CELL NOT INVOLVED IN AN ACCESS OPERATION
10 20130223145 APPARATUS CONFIGURED TO PROGRAM A MEMORY CELL TO A TARGET THRESHOLD VOLTAGE REPRESENTING A DATA PATTERN OF MORE THAN ONE BIT
11 20130222141 Early Alert System for Livestock Disease Detection with a Feedlot Fence Crossbar-Embedded RFID Antenna
12 20130221446 SEMICONDUCTOR WITH THROUGH-SUBSTRATE INTERCONNECT
13 20130221419 Memcapacitor Devices, Field Effect Transistor Devices, And Non-Volatile Memory Arrays
14 20130221318 Memory Cells and Memory Cell Arrays
15 20130221312 SEMICONDUCTOR STRUCTURES COMPRISING CRYSTALLINE PrCaMnO (PCMO) FORMED BY ATOMIC LAYER DEPOSITION
16 20130220549 USING POSITIVE DC OFFSET OF BIAS RF TO NEUTRALIZE CHARGE BUILD-UP OF ETCH FEATURES