25 US patents granted on 09 June 2009 and assigned to Micron
| 1 | 7,546,435 | Dynamic command and/or address mirroring system and method for memory modules |
| 2 | 7,546,416 | Method for substantially uninterrupted cache readout |
| 3 | 7,545,682 | Erase block data splitting |
| 4 | 7,545,674 | Flash memory with low tunnel barrier interpoly insulators |
| 5 | 7,545,669 | Resistive memory device |
| 6 | 7,545,388 | Apparatus, method, and product for downscaling an image |
| 7 | 7,545,183 | Integrated circuit comparator or amplifier |
| 8 | 7,545,009 | Word lines for memory cells |
| 9 | 7,544,990 | Scalable integrated logic and non-volatile memory |
| 10 | 7,544,989 | High density stepped, non-planar flash memory |
| 11 | 7,544,987 | High-k dielectric materials and processes for manufacturing them |
| 12 | 7,544,986 | System including integrated circuit structures formed in a silicone ladder polymer layer |
| 13 | 7,544,984 | Gettering using voids formed by surface transformation |
| 14 | 7,544,921 | Linear distributed pixel differential amplifier having mirrored inputs |
| 15 | 7,544,624 | Systems and methods for processing microfeature workpieces |
| 16 | 7,544,622 | Passivation for cleaning a material |
| 17 | 7,544,615 | Systems and methods of forming refractory metal nitride layers using organic amines |
| 18 | 7,544,604 | Tantalum lanthanide oxynitride films |
| 19 | 7,544,596 | Atomic layer deposition of GdScO3 films as gate dielectrics |
| 20 | 7,544,592 | Method for increasing etch rate during deep silicon dry etch |
| 21 | 7,544,584 | Localized compressive strained semiconductor |
| 22 | 7,544,563 | Methods of forming a plurality of capacitors |
| 23 | 7,544,559 | Methods of forming semiconductor constructions |
| 24 | 7,544,554 | Methods of forming gatelines and transistor devices |
| 25 | 7,544,388 | Methods of depositing materials over substrates, and methods of forming layers over substrates |
