Micron patents granted on 10 February 2009

34 US patents granted on 10 February 2009 and assigned to Micron

1 7,490,211 Memory hub with integrated non-volatile memory
2 7,490,210 System and method for processor with predictive memory retrieval assist
3 7,490,190 Method and system for local memory addressing in single instruction, multiple data computer system
4 7,489,875 System and method for multiple bit optical data transmission in memory systems
5 7,489,587 Semiconductor memory device capable of controlling clock cycle time for reduced power consumption
6 7,489,575 Noise resistant small signal sensing circuit for a memory device
7 7,489,569 Reconstruction of signal timing in integrated circuits
8 7,489,568 Delay stage-interweaved analog DLL/PLL
9 7,489,564 256 Meg dynamic random access memory
10 7,489,556 Method and apparatus for generating read and verify operations in non-volatile memories
11 7,489,551 Memory architecture and method of manufacture and operation thereof
12 7,489,546 NAND architecture memory devices and operation
13 7,489,545 Memory utilizing oxide-nitride nanolaminates
14 7,489,543 Programming multilevel cell memory arrays
15 7,489,352 Wide dynamic range pinned photodiode active pixel sensor (APS)
16 7,489,184 Device and method for generating a low-voltage reference
17 7,489,169 Self-timed fine tuning control
18 7,489,165 Method and apparatus for amplifying a regulated differential signal to a higher voltage
19 7,489,041 Copper interconnect
20 7,489,034 Integrated circuit cooling system and method
21 7,489,028 Die package
22 7,489,020 Semiconductor wafer assemblies
23 7,489,019 Epitaxial semiconductor layer and method
24 7,489,002 Memory having a vertical transistor
25 7,489,000 Capacitor structures with oxynitride layer between capacitor plate and capacitor dielectric layer
26 7,488,899 Compliant contact pin assembly and card system
27 7,488,685 Process for improving critical dimension uniformity of integrated circuit arrays
28 7,488,665 Structurally-stabilized capacitors and method of making of same
29 7,488,664 Capacitor structure for two-transistor DRAM memory cell and method of forming same
30 7,488,651 Method of making vertical transistor structures having vertical-surrounding-gates with self-aligned features
31 7,488,641 Trench DRAM cell with vertical device and buried word lines
32 7,488,618 Microlenses including a plurality of mutually adhered layers of optically transmissive material and systems including the same
33 7,488,514 Methods of forming barium strontium titanate layers
34 7,488,386 Atomic layer deposition methods and chemical vapor deposition methods