30 US patents granted on 23 June 2009 and assigned to Toshiba
| 1 | D594,877 | Video disk player |
| 2 | D594,863 | Mobile information terminal |
| 3 | D594,830 | Television set with a digital video disk player |
| 4 | 7,552,306 | System and method for the sub-allocation of shared memory |
| 5 | 7,552,076 | System for evaluating price risk of financial product or its financial derivative, dealing system and recorded medium |
| 6 | 7,551,947 | Communication terminal having entry data secret function and incoming call notification control method of the same |
| 7 | 7,551,884 | Cleaning apparatus and image forming apparatus |
| 8 | 7,551,767 | Pattern inspection apparatus |
| 9 | 7,551,721 | X-ray diagnostic apparatus, image processing apparatus, and program |
| 10 | 7,551,548 | OFDM demodulation apparatus, method and computer readable medium |
| 11 | 7,551,533 | Optical disk, optical disk drive and method of playing back an optical disk |
| 12 | 7,551,507 | Power supply circuit and semiconductor memory |
| 13 | 7,551,485 | Semiconductor memory device |
| 14 | 7,551,478 | Apparatus, method and computer program product for reading information stored in storage medium |
| 15 | 7,551,472 | Ferroelectric semiconductor memory device |
| 16 | 7,551,431 | Electronic device with rotatable display panel |
| 17 | 7,551,242 | Sintered electrode for cold cathode tube, cold cathode tube comprising this sintered electrode for cold cathode tube, and liquid crystal display device |
| 18 | 7,551,237 | Television receiver having dual power circuits |
| 19 | 7,551,211 | Apparatus and method for processing a photographic image using a stencil |
| 20 | 7,551,019 | Semiconductor integrated circuit and source voltage/substrate bias control circuit |
| 21 | 7,550,904 | Thin-film piezoelectric resonator and filter circuit |
| 22 | 7,550,838 | Semiconductor device |
| 23 | 7,550,801 | Nonvolatile semiconductor memory device |
| 24 | 7,550,792 | Solid-state imaging device and manufacturing method thereof |
| 25 | 7,550,779 | Light emitting device with filled tetrahedral (FT) semiconductor in the active layer |
| 26 | 7,550,368 | Group-III nitride semiconductor stack, method of manufacturing the same, and group-III nitride semiconductor device |
| 27 | 7,550,355 | Low-leakage transistor and manufacturing method thereof |
| 28 | 7,550,342 | Nonvolatile semiconductor memory device and method of manufacturing the same |
| 29 | 7,549,589 | Card processing system |
| 30 | 7,549,580 | Card and host device |
